General features of GaN-related materials
In modern society where our daily environment is supported by various electronic devices, it is critical to pursue opto-electronic or power-electronic devices with less environment...
In modern society where our daily environment is supported by various electronic devices, it is critical to pursue opto-electronic or power-electronic devices with less environment...
Although high-resolution X-ray diffraction (HR-XRD) has been commonly employed for the crystallinity characterization of GaN-related materials, special care is required due to the complexities resulting...
Quality control is a top priority for the pharmaceutical industry. RMID (raw material identification) is an important part of quality control. Since health authorities of...
Raman spectrometry is becoming a common method for identification of hazardous compounds and illicit drugs. Historically, infrared absorption spectroscopy was the common method, but the...
Solid drugs taken orally are mixtures of active pharmaceutical ingredients (hereinafter referred to as “API”); agents such as excipients added as binders or diluents; and lubricants...
Many Japanese pharmaceutical companies are now intensively investigating methods for inspection of starting materials. One of the reasons is the PIC/S (Pharmaceutical Inspection Convention and...
High-voltage and high-efficiency power devices are in strong demand as a way of decreasing energy consumption in a wide range of industrial and consumer products...
TXRF spectrometers are widely used as evaluation instruments for measuring contamination in the semiconductor fabrication process. This is mainly because the TXRF technique allows non-destructive...
Due to the recent development of fundamental technologies of X-ray generators and detectors, such as X-ray focusing optics and area detectors, the size of the...
Total reflection X-ray fluorescence (TXRF) spectrometry is widely used in semiconductor manufacturing processes for nondestructive analyses of metallic contamination on wafer surfaces. Sensitivity requirements for...