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TFXRD Near Fab

High-resolution thin film XRF for RND and production environments

The Rigaku TFXRD Near-Fab brings lab-grade X-ray diffraction precision directly to semiconductor manufacturing lines. Designed for wafers up to 300 mm, this system enables fast, non-destructive analysis of epitaxial layers, thin films, and multilayer stacks through automated wafer handling and recipe-based operation. Its cleanroom-compatible design and high-throughput performance make it ideal for process qualification, defect detection, and yield optimization in the production of advanced power, RF, MEMS, and logic devices.

Available models:​

  • TFXRD Near-Fab 200: Supports wafers up to 200 mm​
  • TFXRD Near-Fab 300: Supports wafers up to 300 mm
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TFXRD Near-Fab 300 600 x 600 TFXRD Near-Fab 200 600 x 600

TFXRD Near Fab Overview

The TFXRD Near-Fab is Rigaku’s versatile thin film X-ray diffraction system, engineered to bring high-resolution structural analysis directly into production environments. Designed for use near semiconductor fabrication lines, it enables rapid, non-destructive evaluation of epitaxial layers, thin film stacks, and multilayer heterostructures on wafers up to 300 mm.​

With a compact, cleanroom-compatible footprint, automated wafer handling, and recipe-based operation, the TFXRD Near-Fab streamlines the transition from research and development (R&D) to pilot and high-volume manufacturing. It delivers precise measurements of lattice strain, crystal quality, layer thickness,  composition, and orientation to support process qualification, early defect detection, and yield optimization.​

By combining lab-grade accuracy with fab-level throughput, the TFXRD-300 ensures reliable monitoring and control of advanced thin film processes for power,  RF, MEMS, and logic device production.​

Pre-production & pilot lines (TFXRD Near-Fab)​

  • Recipe transfer from lab to fab environments​
  • Process qualification for new device architectures​
  • Semi-automated wafer characterization to support pilot runs​
  • Evaluation of defect density and layer uniformity before scale-up​
  • Early-stage monitoring of high-k/metal gate stacks and advanced dielectrics​

TFXRD Near Fab Features

Up to 300 mm wafer compatibility for advanced pilot and production lines​
Cleanroom-compatible design with compact footprint for near-fab installation​
High-resolution X-ray diffraction optics for precise thin film and multilayer analysis​
Automated wafer handling and alignment to support high-throughput operation​
Recipe-based measurement workflows for consistent process monitoring
Non-destructive evaluation of lattice strain, layer thickness, composition, and crystallographic orientation​
Rapid detection of defects and structural anomalies to ensure early process control​
Integrated safety and enclosure system suitable for semiconductor production environments​
Stable, low-maintenance X-ray source designed for continuous operation​
SEMI-compliant software and data interfaces for fab integration​

TFXRD Near Fab Specifications

Technique High-resolution thin film X-ray diffraction (HR-XRD)
Purpose Non-destructive structural analysis of epitaxial layers, thin films, and multilayer stacks
Technology High-precision θ-2θ goniometer with automated wafer alignment and recipe-based operation
Key components High-brilliance X-ray source; precision XRD optics; high-resolution 2D detector; cleanroom-ready enclosure
Options Automated wafer loader, environmental purge system, integrated curvature correction, SEMI-compliant software
Wafer transfer / Sample handling Automated wafer handling (supportsv200 mm and 300 mm wafers)

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