Rigaku at the 73rd JSAP Spring Meeting

Advanced X-ray Solutions for Semiconductor Innovation and Materials Research | March 15-16, 2026

Rigaku invites you to visit our exhibit at the 73rd JSAP Spring Meeting at the Institute of Science Tokyo, Ookayama Campus. Discover how our latest X-ray technologies enable faster development cycles, higher measurement confidence, and deeper structural insight—from semiconductor process development to advanced materials research.

Meet our specialists, explore application-focused solutions, and learn how Rigaku platforms support non-destructive analysis across R&D and manufacturing environments.

Schedule a Meeting with Rigaku at JSAP

[16p-PA3-8] Multi-evaluation of AlN nanopillars using X-ray Diffraction Method

Presenting Authors:
Taiji Yamamoto¹ , Weng Zhewei¹ , Takumu Saito² , Seiya Kato² , Sho Iwayama² , Motoaki Iwaya²

¹ Rigaku Co., Ltd. | ² Meijo University

Keywords: Nitride semiconductors, X-ray diffraction, crystal growth

General Session (Poster Lecture)
15 Crystallography: 15.4 III-V Hydride Crystals
Session: [16p-PA3-1~11] 15.4 III-V Family Nitride Crystals
Date & Time: Monday, March 16, 2026 | 14:30 – 16:00
Location: PA3 (Arena, 1F)

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Overview

Ultraviolet lasers require operation at high currents and high powers, making vertical device structures advantageous. To achieve this structure, a delamination technique using pressurized hot water on nano-pillar-patterned AlN layers has been reported. The formation state of the AlN nano-pillars significantly affects the delamination characteristics and the crystallinity of the overlying AlGaN layer. This presentation reports on the results of the AlN nano-pillar layer evaluated using multiple analytical techniques based on X-ray diffraction method.

Semiconductor applications

Precision metrology for thin films, advanced packaging, and process development

Rigaku’s semiconductor-focused systems deliver high-precision structural characterization for thin films, epitaxy, and wafer-scale measurements. Designed for both research and in-line environments, these tools help accelerate device development while maintaining measurement accuracy.

Semiconductor metrology solutions: Benefits of advanced X-ray characterization

Non-destructive wafer characterization for rapid feedback without impacting valuable samples
High-resolution thin-film and epitaxy analysis to support advanced device architectures
High-throughput measurement workflows designed for modern fab environments
Scalable solutions that bridge R&D exploration and production-level process control

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Enhancing Semiconductor Device Reliability through Surface Metal Contamination Analysis | Surface Metal Analysis for SiC & GaN Devices

Accurate detection of surface metal contamination is critical for ensuring semiconductor device performance, yield, and long-term reliability. As device geometries shrink and advanced materials such as SiC (Silicon Carbide) and GaN (Gallium Nitride) become mainstream in power semiconductor applications, the need for ultra-sensitive contamination analysis continues to grow.

This technical seminar introduces the TXRF3760 Total Reflection X-Ray Fluorescence (TXRF) Spectrometer, a high-sensitivity solution for surface metal contamination analysis in advanced semiconductor manufacturing environments.

Participants will learn how surface metal contamination impacts semiconductor device reliability, gain a clear understanding of the fundamentals of Total Reflection X-ray Fluorescence (TXRF) analysis, and explore the key features and advantages of the TXRF3760 system. The seminar will also present application examples for Si, SiC, and GaN devices, highlighting how TXRF supports process development and quality control.

This session is ideal for: semiconductor process engineers, contamination control and yield specialists, failure analysis and reliability engineers, as well as quality assurance and materials characterization professionals.

Date & time: March 16, 18:00

Venue: 13.7 / W8E_101, Indoor Sports Hall

Presenter: Hidetoshi Toda - Rigaku Corporation

Topic: Overview of the surface metal contamination analysis system TXRF 3760

Join us to explore how advanced TXRF surface contamination analysis can strengthen semiconductor device reliability and support next-generation power device manufacturing. We look forward to welcoming you.

Materials analysis applications

Flexible XRD platforms for research, education, and industrial materials development

Rigaku’s materials analysis solutions provide versatile diffraction capabilities for powders, thin films, and functional materials. From compact desktop systems to fully automated research platforms, these tools enable precise structural analysis across a wide range of applications.

Ideal applications

Functional materials and energy research
Thin films and coatings
Ceramics, catalysts, and powders
Academic and industrial laboratories

Speak with a Materials Analysis Specialist

Experience Rigaku at JSAP

At our exhibit, you can:

Explore semiconductor-focused XRD and XRF solutions
See advanced reciprocal space mapping and XRD mapping technologies
Discuss real-world measurement challenges with application experts
Discover how automation and software integration streamline analysis workflows

Whether your focus is semiconductor metrology or materials research, Rigaku provides the precision and flexibility needed to move innovation forward.

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Planning to attend JSAP? Reserve time with our team to discuss your applications and see how Rigaku solutions can support your next breakthrough.

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