XTRAIA XD-3200

In-line HRXRD and XRR Metrology Tool

High-resolution XRD epitaxial film characterization for blanket and patterned wafers

The XTRAIA XD-3200 is a versatile x-ray metrology tool enabling non-destructive analysis of single- and multi-layer films on blanket 300 mm and 200 mm wafers with high throughput in high-volume manufacturing.

Measurements results include film thickness, density, and roughness (by X-ray reflectometry, XRR) and epitaxial film thickness, composition, strain, lattice relaxation, and crystal structure quality (by high-resolution XRD, HRXRD). 

XTRAIA XD-3200 Overview

X-ray metrology solution for a wide range of applications on blanket wafers

Transistor (SiGe), LED/LD (GaN, GaAs, InP), MEMS / sensors (PZT, AlN), new memory (GST), metal films, and multilayer films

This sophisticated X-ray metrology tool enables high-throughput measurements in high-volume manufacturing on 300 mm (and 200 mm) blanket wafers ranging from ultrathin single-layer films to multilayer stacks. 

The XTRAIA XD-3200’s superior capability results from Rigaku’s world-class developments in key X-ray components, including high-brilliance source technology, multilayer optics, and state-of-the-art 2D detectors with ultrahigh dynamic range and high sensitivity.

The XTRAIA XD-3200 offers:

  • X-ray reflectometry (XRR) to characterize thickness, density, and roughness of single- and multilayer films of all types (amorphous, polycrystalline, epitaxial).
  • High-resolution XRD (HRXRD) to characterize epitaxial film thickness, composition, strain, and crystalline structure quality by rocking curve (RC) and reciprocal space mapping (RSM) measurements. 
  • A ¼-circle chi cradle for twist/tilt-angle measurements and crystal orientation measurements (film texture).

XTRAIA XD-3200 Features

In-line capability for efficient processing and process monitoring
Compatible with 300 mm and 200 mm wafers
Utilizes a high-power (9 kW) rotating-anode X-ray source
Equipped with a 2-dimensional detector for precise data collection
Includes a stage and goniometer for flexible sample positioning
Supported by advanced analysis software for comprehensive data interpretation
Factory automation capability (GEM300, E84/OHT support) for high-volume manufacturing (HVM)

XTRAIA XD-3200 Specifications

Technique High-resolution X-ray diffraction (HRXRD), X-ray reflectometry (XRR)
Benefit Non-destructive wafer analysis for multilayered materials and epitaxial films. Measurements of thickness, composition, strain, lattice relaxation, and crystal structure quality
X-ray source 9 kW Cu rotating anode or 2.2 kW Cu sealed tube
Line focus with mirror and/or 2/4 bounce crystal. 
Technology For blanket epitaxial thin films (e.g. Si/SiGe multilayer)
Attributes Blanket wafer metrology
X-ray detector: 2D (HyPix-3000)
X-ray source: 9 kW Cu rotating anode
X-ray optics: Max. 2 monochromators Ge (400)x2,Ge(220)x2,Ge(220)x4
Highly accurate goniometer
Features High-intensity rotating anode
Chi axis
Dimensions 1656(W) x 3689(D) x 2289(H) mm
Measurement results HRXRD and XRR
XRR, XRD, Rocking curve and RSM

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