XTRAIA XD-3200
In-line HRXRD and XRR Metrology Tool
High-resolution XRD epitaxial film characterization for blanket and patterned wafers
The XTRAIA XD-3200 is a versatile x-ray metrology tool enabling non-destructive analysis of single- and multi-layer films on blanket 300 mm and 200 mm wafers with high throughput in high-volume manufacturing.
Measurements results include film thickness, density, and roughness (by X-ray reflectometry, XRR) and epitaxial film thickness, composition, strain, lattice relaxation, and crystal structure quality (by high-resolution XRD, HRXRD).
XTRAIA XD-3200 Overview
X-ray metrology solution for a wide range of applications on blanket wafers
Transistor (SiGe), LED/LD (GaN, GaAs, InP), MEMS / sensors (PZT, AlN), new memory (GST), metal films, and multilayer films
This sophisticated X-ray metrology tool enables high-throughput measurements in high-volume manufacturing on 300 mm (and 200 mm) blanket wafers ranging from ultrathin single-layer films to multilayer stacks.
The XTRAIA XD-3200’s superior capability results from Rigaku’s world-class developments in key X-ray components, including high-brilliance source technology, multilayer optics, and state-of-the-art 2D detectors with ultrahigh dynamic range and high sensitivity.
The XTRAIA XD-3200 offers:
- X-ray reflectometry (XRR) to characterize thickness, density, and roughness of single- and multilayer films of all types (amorphous, polycrystalline, epitaxial).
- High-resolution XRD (HRXRD) to characterize epitaxial film thickness, composition, strain, and crystalline structure quality by rocking curve (RC) and reciprocal space mapping (RSM) measurements.
- A ¼-circle chi cradle for twist/tilt-angle measurements and crystal orientation measurements (film texture).
XTRAIA XD-3200 Features
XTRAIA XD-3200 Specifications
| Technique | High-resolution X-ray diffraction (HRXRD), X-ray reflectometry (XRR) | |
|---|---|---|
| Benefit | Non-destructive wafer analysis for multilayered materials and epitaxial films. Measurements of thickness, composition, strain, lattice relaxation, and crystal structure quality | |
| X-ray source | 9 kW Cu rotating anode or 2.2 kW Cu sealed tube Line focus with mirror and/or 2/4 bounce crystal. |
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| Technology | For blanket epitaxial thin films (e.g. Si/SiGe multilayer) | |
| Attributes | Blanket wafer metrology X-ray detector: 2D (HyPix-3000) X-ray source: 9 kW Cu rotating anode X-ray optics: Max. 2 monochromators Ge (400)x2,Ge(220)x2,Ge(220)x4 Highly accurate goniometer |
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| Features | High-intensity rotating anode Chi axis |
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| Dimensions | 1656(W) x 3689(D) x 2289(H) mm | |
| Measurement results | HRXRD and XRR XRR, XRD, Rocking curve and RSM |
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