XRTmicron Near-Fab

Bridging R&D and production


X-ray topography solution for seamless transition from Lab to Fab

The XRTmicron Near-Fab system is Rigaku’s hybrid solution for semiconductor manufacturers who need a flexible tool that serves both research and pilot production lines. By offering both manual and automated wafer transfer, the Near-Fab configuration delivers the versatility required for evolving workflows.

Engineered for minimized contamination,, non-destructive wafer evaluation, the system supports a wide range of wafer sizes (75–300 mm) and substrates, including Si, SiC, GaN, GaAs, InP, AlN, and Ga₂O₃. With advanced optics, detectors, and 3D cross-section topography capabilities, the XRTmicron Near-Fab ensures precise defect visualization while preparing processes for fab-scale deployment.

XRTmicron with loader XTRAIA XT Series image 2

XRTmicron Near-Fab Overview

The XRTmicron Near-Fab is designed for semiconductor manufacturers who require a flexible evaluation system that works across both R&D environments, pilot production lines, and high-volume production. Positioned between the Lab and Fab configurations, it combines research-level precision with the automation and reliability needed for process integration and quality control.

Supporting wafers up to 300 mm, the Near-Fab system offers both manual and automated wafer transfer, making it ideal for fabs in transition—from early material studies to process qualification and inline quality monitoring. Its non-destructive, high-resolution imaging provides detailed visualization of dislocations, slip lines, and other crystallographic defects that directly impact device yield and reliability.

With SEMI-compliant defect analysis software, the XRTmicron Near-Fab enables engineers to bridge the gap between discovery and high-volume manufacturing, ensuring that materials and processes are production-ready.

Applications

  1. SiC for power devices: TSD and BPD mapping (SEMI M91/M93 compliant)
  2. GaN & AlN for RF, optoelectronics and power devices: Process development and quality control
  3. InP & GaAs for VCSEL and photonics: defect mapping on substrate and epi-level
  4. GaO for power devices: Substrate and epitaxy quality improvement
  5. AlO as optoelectronic substrates: process improvement and quality control
  6. Si/SiGe superlattices for 3D-DRAM and advanced logic structures: Process development and misfit dislocation detection

XRTmicron Near-Fab Features

Flexible wafer handling
Manual or automated transfer with multiple holder options (Kapton, glassy carbon, aluminum alloy)
Broad sample compatibility
Supports full wafers, epitaxial stacks, and crystal ingots/boules
High brilliance
Dual-wavelength MicroMax-007 source with parabolic multilayer optics
Detector suite
XTOP (5.4 μm/pixel), HR-XTOP (2.4 μm/pixel, optional), and HyPix-3000HE (100 μm/pixel, high-speed)
Production control ready
Designed for pilot-line integration with low contamination risk. Can be installed within a gas flow unit.
XRT Toolbox integration
SEMI-compliant defect classification and quantification, KLARF export, batch analysis.

XRTmicron Near-Fab Specifications

Technique X-ray topography imaging
Purpose Non-destructive evaluation of single-crystalline materials
Technology Switch between transmission and reflection topography
Key components High-brightness micro X-ray source; Specialized X-ray mirror optics; High-resolution, high-sensitivity X-ray camera; Transfer system
Options HR-XTOP camera, Crystal collimator,​Defect inspection done with XRT Toolbox Software
Wafer transfer / Sample handling Supports both automated and manual wafer handling

XRTmicron Near-Fab Resources

Webinars

Non-Destructive Dislocation Characterization in SiC Substrates Using XRTmicron Technology Watch the Recording
Investigating Crystalline Defects of Semiconductors Using X-ray Topography Watch the Recording

Rigaku Journal articles

adobeCrystal defects in SiC wafers and a new X-ray topography system Read the Article
adobeHigh-throughput, high-resolution X-ray topography imaging system: XRTmicron Read the Article
adobeNon-destructive characterization of crystallographic defects of SiC substrates using X-ray topography for R&D and quality assurance in production Read the Article
adobeDefect structure analysis in single crystal substrates using XRTmicron Read the Article
adobeDramatic improvement in the throughput of X-ray topography Read the Article

Publications

XRTmicron Near-Fab Events

Learn more about our products at these events

  • SEMICON Taiwan
    September 9 2025 - September 11 2025
    Taipei, Taiwan
  • EMRS Fall meeting 2025
    September 14 2025 - September 17 2025
    Warsaw, Poland
  • International Conference on Silicon Carbide and Related Materials (ICSCRM 2025) 
    September 15 2025 - September 18 2025
    Busan, Korea
  • SEMICON Japan
    December 1 2025 - December 2 2025
    Tokyo, Japan

Contact Us

Whether you are interested in getting a quote, want a demo, need technical support, or simply have a question, we're here to help.