XRTmicron Near-Fab
Bridging R&D and production
X-ray topography solution for seamless transition from Lab to Fab
The XRTmicron Near-Fab system is Rigaku’s hybrid solution for semiconductor manufacturers who need a flexible tool that serves both research and pilot production lines. By offering both manual and automated wafer transfer, the Near-Fab configuration delivers the versatility required for evolving workflows.
Engineered for minimized contamination,, non-destructive wafer evaluation, the system supports a wide range of wafer sizes (75–300 mm) and substrates, including Si, SiC, GaN, GaAs, InP, AlN, and Ga₂O₃. With advanced optics, detectors, and 3D cross-section topography capabilities, the XRTmicron Near-Fab ensures precise defect visualization while preparing processes for fab-scale deployment.


XRTmicron Near-Fab Overview
The XRTmicron Near-Fab is designed for semiconductor manufacturers who require a flexible evaluation system that works across both R&D environments, pilot production lines, and high-volume production. Positioned between the Lab and Fab configurations, it combines research-level precision with the automation and reliability needed for process integration and quality control.
Supporting wafers up to 300 mm, the Near-Fab system offers both manual and automated wafer transfer, making it ideal for fabs in transition—from early material studies to process qualification and inline quality monitoring. Its non-destructive, high-resolution imaging provides detailed visualization of dislocations, slip lines, and other crystallographic defects that directly impact device yield and reliability.
With SEMI-compliant defect analysis software, the XRTmicron Near-Fab enables engineers to bridge the gap between discovery and high-volume manufacturing, ensuring that materials and processes are production-ready.
Applications
- SiC for power devices: TSD and BPD mapping (SEMI M91/M93 compliant)
- GaN & AlN for RF, optoelectronics and power devices: Process development and quality control
- InP & GaAs for VCSEL and photonics: defect mapping on substrate and epi-level
- Ga₂O₃ for power devices: Substrate and epitaxy quality improvement
- Al₂O₃ as optoelectronic substrates: process improvement and quality control
- Si/SiGe superlattices for 3D-DRAM and advanced logic structures: Process development and misfit dislocation detection
XRTmicron Near-Fab Features
XRTmicron Near-Fab Specifications
Technique | X-ray topography imaging | |
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Purpose | Non-destructive evaluation of single-crystalline materials | |
Technology | Switch between transmission and reflection topography | |
Key components | High-brightness micro X-ray source; Specialized X-ray mirror optics; High-resolution, high-sensitivity X-ray camera; Transfer system | |
Options | HR-XTOP camera, Crystal collimator,Defect inspection done with XRT Toolbox Software | |
Wafer transfer / Sample handling | Supports both automated and manual wafer handling |
XRTmicron Near-Fab Resources
Webinars
Non-Destructive Dislocation Characterization in SiC Substrates Using XRTmicron Technology | Watch the Recording |
Investigating Crystalline Defects of Semiconductors Using X-ray Topography | Watch the Recording |
Rigaku Journal articles
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Publications
XRTmicron Near-Fab Events
Learn more about our products at these events
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EventDatesLocationEvent website
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SEMICON TaiwanSeptember 9 2025 - September 11 2025Taipei, Taiwan
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EMRS Fall meeting 2025September 14 2025 - September 17 2025Warsaw, Poland
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International Conference on Silicon Carbide and Related Materials (ICSCRM 2025)September 15 2025 - September 18 2025Busan, Korea
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SEMICON JapanDecember 1 2025 - December 2 2025Tokyo, Japan

Contact Us
Whether you are interested in getting a quote, want a demo, need technical support, or simply have a question, we're here to help.