TFXRD-200

X-ray Diffraction Analysis (XRD) System for Up to 200 mm Wafer Full Mapping

The TFXRD-200 is a dedicated XRD tool designed for the measurement of thin films on large-diameter wafers and measures the film thickness, the crystal quality, the composition ratio of the compound material, and relaxation of the epitaxial wafers, etc.

TFXRD-200 Overview

High-precision goniometer with selectable optics

 XRD System for all thin film XRD applications and XY movable stage for mapping up to 300 mm wafers.

The system guarantees that your samples will remain intact, ensuring you can conduct further experimentation and analysis without any issues. Trust us to provide the most precise and reliable results for all your research and development needs.

XRD system mapping tool for Near-fab applications

Improve materials analysis, enhanced quality control, and optimized manufacturing processes.

Thin films

  • Precise thickness and composition
  • Crystallographic information
  • Stress and strain analysis
  • Non-destructive characterization
  • Multilayer analysis
  • Advanced material development

Specialized for XRR thickness

Determine the thickness, density, and interface roughness of thin films, coatings, and multilayer structures. 

GaAs (004), cubic GaN (002), hexagonal GaN (0004) specialized evaluation

Precise analysis of the crystallographic orientations and control the growth and processing of materials to achieve desired performance in electronic and optoelectronic devices.

 

TFXRD-200 Features

Highest precision goniometer with selectable optics for all thin film XRD applications and XY-movable stage for mapping
Efficient measurement speed
Incident monochromator for high-resolution measurements
Large wafer full mapping
For up to 200 mm wafers

TFXRD-200 Specifications

Technique X-ray diffraction (XRD), rocking curve (XRC), and reflectometry (XRR)
Benefit High-precision goniometer with full mapping XY-stage for 200 mm wafers
Technology High-precision θ-2θ horizontal goniometer with large cradle
Attributes Blanket wafer metrology
Up to 200 mm wafer full mapping XY stage
Options PhotonMax high-flux 9 kW rotating anode X-ray source
Confocal Max-flux 800 W rotating anode X-ray source
HyPix-3000 high energy resolution 2D HPAD detector
Computer External PC, MS Windows OS, SmartLab Studio II software
Dimensions Approx. 1900 (W) x 2200 (H) x 1900 (D) mm
Mass Approx. 1600 kg
Power requirements 3Ø, 200 V 50/60 Hz, 30 A (sealed tube) or 60 A (9 kW rotating anode)

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