XHEMIS TX-3000
Total Reflection X-ray Fluorescence System
Ultrahigh-speed metal contamination mapping
Next-generation TXRF system compatible with wafers up to 300 mm in diameter
Total Reflection X-ray fluorescence (TXRF) is widely used in semiconductor manufacturing processes—such as cleaning, lithography, etching, and thin film deposition—for the precise detection of metallic contamination.
The XHEMIS TX-3000 is a state-of-the-art TXRF system equipped with a multi-element detector capable of simultaneously analyzing three locations, in addition to the conventional single-target, triple-beam configuration. This enables high-throughput analysis and allows for highly sensitive and efficient detection of elements ranging from Na to U.
XHEMIS TX-3000 Overview
The XHEMIS TX-3000 is a cutting-edge TXRF system optimized for advanced semiconductor processes, where rapid, non-destructive, and highly sensitive analysis of trace metal contamination is essential.
Developed by Rigaku, the system features a proprietary multi-element detector and a newly designed optical system that irradiates the wafer surface with excitation X-rays over a wide area and with uniform intensity. This enables simultaneous multi-point measurement on silicon wafers, resulting in a threefold increase in throughput. It significantly enhances analytical efficiency in high-volume production lines, contributing to improved reliability in quality control and higher yield rates.
Additionally, the system integrates machine learning-based “Spectrum-forecasting software”, further doubling throughput. The “Background optimization function” for metal film measurements also expands its applicability to a broader range of materials, including barrier metals, high-k dielectrics, and compound semiconductors.
Detection Limit of typical elements (LLD）
| Detection limit LLD (E10 atoms/cm²) | Al | Fe | Ni | Cu |
| TXRF | 25 | 0.1 | 0.1 | 0.15 |
Measurement time: 1000 sec
XHEMIS TX-3000 Features
XHEMIS TX-3000 Specifications
| Technique | Total Reflection X-ray Fluorescence (TXRF) | |
|---|---|---|
| Benefit | Rapid, non-destructive measurement of trace elemental surface contamination (Na – U) ~ 3x improvement in mapping speed E9 atoms/cm² detection limit |
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| Technology | High-sensitivity metal contamination analysis. | |
| Attributes | Three-detector configuration High-power W-anode X-ray source (9 kW rotating anode) Three excitation energies optimized for light, transition, and heavy elements XYθ sample stage Dual FOUP load ports |
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| Features | Full wafer mapping (SWEEPING-TXRF) Zero edge exclusion (ZEE-TXRF) |
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| Options | Backside analysis (BAC-TXRF) GEM300 software, E84/OHT support |
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| Dimensions | 1280 (W) x 3750 (D) x 2040 (H) (Excluding monitor and signal tower) |
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| Measurement results | Quantitative result, spectrum chart, color contour map, mapping table | |
XHEMIS TX-3000 Application Notes
The following application notes are relevant to this product
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RSMD010 - Metrology for Substrate Back Side Contamination
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RSMD001 - Evaluation Of Wet Cleans In SiC Power MOSFET Fabrication By TXRF
XHEMIS TX-3000 Resources
Webinars
| Total Reflection X-ray Fluorescence (TXRF) for Semiconductor Manufacturing | Watch the Recording |
XHEMIS TX-3000 Events
Learn more about our products at these events
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EventDatesLocationEvent website
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SEMICON JapanDecember 1 2025 - December 2 2025Tokyo, Japan
Contact Us
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