TXRF-V310

TXRF Spectrometer with Integrated VPD

High-speed metal contamination mapping

Highest sensitivity with VPD

Total reflection X-ray fluorescence (TXRF) analysis can gauge contamination in all fab processes, including cleaning, litho, etch, ashing, films, etc. The TXRF-V310 can measure elements from Na through U with a single-target, 3-beam X-ray system and a liquid nitrogen-free detector system.

The TXRF-V310 includes Rigaku's patented XYθ sample stage system, an in-vacuum wafer robotic transfer system, and new user-friendly windows software. All of these contribute to higher throughput, higher accuracy and precision, and easy routine operation.

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TXRF-V310 Overview

Integrated vapor phase decomposition (VPD) capability enables automatic VPD preparation of one wafer while a TXRF measurement is made on another wafer for the highest sensitivity and high throughput. VPD-TXRF eliminates the operator variability that may occur with ICP-MS, and VPD-TXRF can be completely controlled via factory automation. VPD recovery from selected areas, including the bevel area, is available.

Detection Limit of typical elements (LLD）

Detection limit LLD (E10 atoms/cm²)	Al	Fe	Ni	Cu
TXRF	25	0.10	0.10	0.15
VPD-TXRF	0.1	0.001	0.001	0.002

Measurement time: 1000 sec

Options

Sweeping TXRF software enables mapping of the contaminant distribution over the wafer surface to identify "hot spots" that can be automatically re-measured at higher precision.
ZEE-TXRF capability overcomes the historical 15 mm edge exclusion of original TXRF designs, enabling measurements to be made with zero edge exclusion.
BAC-TXRF capability enables fully-automated front-side and back-side TXRF measurements of 300 mm wafers with non-contacting wafer flipping.

TXRF-V310 Features

Accepts 300 mm, 200 mm, and 150 mm wafers

Wide range of analytical elements (Na~U)

Light-element sensitivity (for Na, Mg, and Al)

Single target 3-beam method and XYθ stage are unique to Rigaku, enabling highly accurate ultra trace analysis over the entire wafer surfaceIntegrated, fully-automated VPD preparation for highest sensitivity

1E7 atoms/cm² detection limits

Import measurement coordinates from defect inspection tools for follow-up analysis

Multitasking: simultaneous VPD and TXRF operation for highest throughput

TXRF-V310 Specifications

Technique	Total reflection X-ray fluorescence (TXRF) with vapor phase decomposition (VPD)
Benefit	Measurement of ultra-trace elemental surface contamination; 1E7 atoms/cm² detection limits
Technology	Automatic VPD preparation, three-beam excitation and automatic optics alignment
Attributes	High-power W-anode X-ray source (9 kW rotating anode) Three excitation energies optimized for light, transition, and heavy elements XYθ sample stage Dual FOUP load ports
Features	Full wafer mapping (SWEEPING-TXRF) Zero edge exclusion (ZEE-TXRF) Integrated, automated VPD pre-processing for Si wafers (VPD-TXRF) for highest sensitivity
Options	Backside analysis (BAC-TXRF) GEM300 software, E84/OHT support Vapor phase treatment (VPT-TXRF) for enhanced sensitivity while retaining spatial information VPD for hydrophilic wafer surfaces (e.g. SiC) 200 mm load ports
Dimensions	1200 (W) x 2050(H) x 2990 (D) mm
Measurement results	Quantitative result, spectrum chart, color contour map, mapping table