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TXRF 3760

Wafer Surface Contamination for up to 200 mm Wafers

Measure elemental contamination at discrete points or with full wafer maps

Total reflection X-ray fluorescence (TXRF) analysis can gauge contamination in all fab processes, including cleaning, litho, etch, ashing, films, etc. The TXRF 3760 can measure elements from Na through U with a single-target, 3-beam X-ray system, and a liquid nitrogen-free detector system.

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TXRF 3760 Overview

The TXRF 3760 includes Rigaku's patented XYθ sample stage system, an in-vacuum wafer robotic transfer system, and new user-friendly Windows software. These contribute to higher throughput, accuracy and precision, and easy routine operation.

Optional Sweeping TXRF software enables mapping the contaminant distribution over the wafer surface to identify "hot spots" that can be automatically re-measured at higher precision.

Optional ZEE-TXRF capability overcomes the historical 15 mm edge exclusion of original TXRF designs, enabling measurements to be made with zero edge exclusion.

High-reliability wafer surface contamination analysis

TXRF is an indispensable tool for materials and device development for semiconductor manufacturing. Remarkable reliability is achieved thanks to newly developed X-ray optics, a new stage mechanism, and a new concept in compact rotating-anode X-ray sources. Also, a new, low-COO TXRF model offers reduced initial and operating costs.

Detection limit of typical elements (LLD)

Detection limit LLD (E10 atoms/cm²) Na Al Fe Ni Cu
25 25 0.1 0.1 0.15

TXRF 3760 Features

Ease of operation and rapid analysis results
Accepts 200 mm and smaller wafers
Compact design, footprint
High-power rotating anode source
Wide range of analytical elements (Na~U)
Light-element sensitivity (for Na, Mg, and Al)
Application to bare Si and to non-Si substrates
Import measurement coordinates from defect inspection tools for follow-up analysis

TXRF 3760 Specifications

System parameters Specifications
Technique Total reflection X-ray fluorescence (TXRF)
Benefit Rapid, non-destructive measurement of trace elemental surface contamination (Na – U)
Technology Three-beam TXRF system with electronically-cooled detector, and automatic optics exchange 
Attributes High-power W-anode X-ray source (9 kW rotating anode)
Three excitation energies optimized for light, transition, and heavy elements
XYθ sample stage for diffraction avoidance
In-vacuum wafer robotic transfer system
Accepts up to 200 mm wafers
Features Full wafer mapping (SWEEPING-TXRF)
Zero edge exclusion (ZEE-TXRF)
Options SECS/GEM software
SMIF handling
Dimensions 1000 (W) x 1760 (H) x 948 (D) mm
Measurement results Quantitative result, spectrum chart, color contour map, mapping table

TXRF 3760 Application Notes

The following application notes are relevant to this product

TXRF 3760 Resources

Webinars

Total Reflection X-ray Fluorescence (TXRF) for Semiconductor Manufacturing Watch the Recording

Rigaku Journal articles

adobeMachine learning and application to spectral analysis on TXRF spectrometry Read the Article
adobeEvaluation of contamination of power semiconductor device wafers by total reflection X-ray fluorescence spectrometer Read the Article

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