Rigaku at SPIE Advanced Lithography + Patterning

Rigaku will exhibit at SPIE to showcase materials and structural X-ray metrology solutions addressing the most critical challenges in advanced lithography, CFET integration, and sub-2 nm logic nodes.​

Visit us at Booth 719 to discuss how X-ray-based metrology delivers non-destructive, sub-nanometer insight into buried and laterally recessed features that are increasingly difficult to measure with conventional techniques.

Featured Technical Presentation

(Invited Paper)

Paper 13981-31

Sub-nm depth sensitivity for laterally recessed SiGe in CFET structures using micro-spot X-ray fluorescence

February 25, 2026
8:00–8:30 AM PST

Precise control of SiGe recess depth is critical for CFET integration, as it defines the spatial window for the inner spacer. However, conventional metrology techniques struggle to non-destructively resolve nanometer-scale buried features with sufficient sensitivity and throughput.

This invited presentation demonstrates micro-spot X-ray fluorescence (μXRF) as a fast, inline-capable solution for quantifying SiGe recess depth by tracking Ge fluorescence intensity before and after etching.

Attend the Invited Talk

Key results

• Au-Lβ excitation delivered a 2.2× increase in Ge signal compared to Mo-Kα
• Achieved sub-nanometer depth sensitivity with strong correlation to cross-sectional TEM
• Repeatability: 0.8–3.1% for a 50-second acquisition
• 3σ depth resolution: 0.3–0.8 nm for nominal recess depths of 5–8 nm

These results establish μXRF as a viable metrology solution for 2 nm nodes and beyond, enabling non-destructive control of critical CFET process steps.