XTRAIA CD-3200T
Transmission X-ray CD metrology tools
TSAXS for in-line small angle X-ray scattering for CD measurements
For up to 300 mm wafers.
Cutting-edge device micro-shape (shallow pattern/deep pattern) measurement equipment
Non-destructive measurement of nanostructures such as cross-sectional profile, depth, shape, and tilt is possible. Obtain an X-ray diffraction image that reflects the cross-sectional shape.
XTRAIA CD-3200T Overview
We have a lineup of optimal equipment for each shape of semiconductor device.
It is possible to measure nanostructures such as cross-sectional profile, depth, shape, and tilt non-destructively.
Measurement and analysis can be started without prior preparation such as libraries. Accurately measures organic materials such as resist without shrinkage.
Application examples
- Deep hole non-destructive measurement using TSAXS
- Overlay of TSAXS and cross-sectional SEM
- Sidewall TiN film thickness profile by TSAXS
- Distribution of CD and in-plane tilt angle in the wafer plane
- CD profile in the depth direction
XTRAIA CD-3200T Specifications
| Technique | Small angle X-ray scattering - transmission mode (TSAXS) | |
|---|---|---|
| Benefit | Critical dimension measurements of high aspect ratio (HAR) structures | |
| X-ray source | Rotating anode (Mo Ka, 17.4 keV) | |
| X-ray optics | Multilayer mirror optics | |
| X-ray detector | HyPix 6000HE (2D) | |
| Attributes | Patterned wafer metrology For periodic fine 3D shape For deep hole/pillar structures DRAM, 3D-NAND, 3D LSI structure |
|
| Features | Patterned recognition and full-wafer mapping | |
| Options | GEM300 software, E84/OHT support | |
| Dimensions | 4020(W) × 2500(D) × 3450(H) mm | |
| Measurement targets | Pitch, CD, height, sidewall thickness, SWA (sidewall angle), RT (round top), RB (round bottom), CD distribution, pitch distribution, height distribution | |
XTRAIA CD-3200T Events
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