XTRAIA CD-3200T
Advanced transmission X-ray critical dimension metrology tool
- Transmission SAXS for high-aspect-ratio nanostructures
- Full-wafer mapping with subnanometer resolution
- Nondestructive analysis of shape, depth, and tilt
- Supports DRAM, 3D-NAND, FinFET, and EUV resist profiling
The XTRAIA CD-3200T delivers advanced critical dimension metrology using transmission small angle X-ray scattering (TSAXS). Designed for nondestructive analysis of high-aspect-ratio features, the system provides accurate measurements of nanostructure depth, sidewall angles, and 3D profiles without sample modification.
Its full-wafer mapping capabilities and compatibility with both organic and inorganic materials make it an ideal tool for evaluating advanced memory structures and pattern fidelity. The system’s immediate measurement capability and high-throughput performance enable streamlined CD control across production and development environments.
XTRAIA CD-3200T Overview
Engineered for manufacturers of memory and logic devices, the XTRAIA CD-3200T applies TSAXS to deliver high-precision, non-destructive analysis of nanostructures. It simplifies quality monitoring by supporting a wide range of materials and patterns without requiring measurement libraries or pre-treatment.
The XTRAIA CD-3200T is an advanced metrology tool designed for precise characterization of nanostructures in semiconductor manufacturing. It uses transmission small angle X-ray scattering (TSAXS) technology for accurate critical dimension (CD) measurements, including sidewall angles.
Optimized for high-throughput applications, it enables full-wafer mapping with sub-nanometer resolution and can evaluate both organic and inorganic materials, providing reliable data for quality control. Its high sensitivity and innovative design make the XTRAIA CD-3200T essential for precision and efficiency in semiconductor production.
XTRAIA CD-3200T Features
XTRAIA CD-3200T Specifications
| Technique | Transmission small angle X-ray scattering (TSAXS) | |
|---|---|---|
| Benefit | CD profiling of HAR structures with subnanometer resolution | |
| X-ray source | Rotating anode (Mo Ka, 17.4 keV) | |
| X-ray optics | Multilayer mirror optics | |
| X-ray detector | HyPix 6000HE (2D) | |
| Sample compatibility | Patterned wafers, organic and inorganic materials | |
| Attributes | High-aspect ratio metrology; deep-hole, 3D structure profiling | |
| Features | Pattern recognition, full-wafer mapping | |
| Options | GEM300 software, E84/OHT compatibility | |
| Measurement results | CD profile, depth, shape, in-plane tilt, full-wafer CD mapping | |
XTRAIA CD-3200T Options
- GEM300 compliance package
- E84/OHT automation support
The following accessories are available for this product:
XTRAIA CD-3200T Resources
Rigaku Journal articles
 Small-angle X-ray scattering shape metrology for 3D semiconductor devices |
Read the Article |
XTRAIA CD-3200T Events
Learn more about our products at these events
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EventDatesLocationEvent website
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JSAP Autumn EXPOSeptember 6 2025 - September 9 2025Nagoya, Japan
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The 86th JSAP Autumn Meeting 2025September 6 2025 - September 9 2025Tokyo, Japan
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SEMICON TaiwanSeptember 9 2025 - September 11 2025Taipei, Taiwan
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EMRS Fall meeting 2025September 14 2025 - September 17 2025Warsaw, Poland
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International Conference on Silicon Carbide and Related Materials (ICSCRM 2025)September 15 2025 - September 18 2025Busan, Korea
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SEMICON JapanDecember 1 2025 - December 2 2025Tokyo, Japan
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