XTRAIA CD-3010G

Grazing-incidence X-ray scattering critical dimension metrology tool for semiconductor applications

• GISAXS-based non-destructive CD and shape profiling
• Sub-nanometer precision for shallow and repeating structures
• Full-wafer mapping and pattern recognition
• Ideal for FinFETs, EUV resists, and shallow memory features

The XTRAIA CD-3010G is designed for critical dimension analysis using grazing-incidence small angle X-ray scattering (GISAXS). This advanced metrology tool enables structural profiling of nanoscale patterns including line-and-space, dot, or shallow hole features without damaging the sample.

 Its compatibility with a variety of materials—including EUV resist layers—combined with full-wafer mapping and robust pattern recognition makes it suitable for both R&D and high-volume production environments.