XRTmicron

X-ray Topography Imaging System

For non-destructive evaluation of single-crystalline materials

Rigaku XRTmicron is a fast, high-resolution laboratory X-ray topography system for non-destructive dislocation imaging. Various types of dislocations and non-uniformity within single crystal wafers (such as Si, SiC, GaN, Ge, GaAs, quartz, sapphire, rutile, calcium fluoride etc.) can be imaged across wafers up to 300 mm in diameter. X-ray topography is a widely used dislocation analysis technique for both research and development and process control by various single crystal, wafer and device manufacturers.

XRTmicron Overview

Topography engineered for performance

Unmatched scan speed ten times higher compared to that of conventional systems is achieved by combining a high-brilliance dual-wavelengths X-ray source, the MicroMax-007 DW, and X-ray mirrors optimized for the topography application. Both Cu and Mo X-ray anodes and their mirrors are simultaneously mounted on the system and switched on-demand to perform reflection and transmission measurements without any system reconfiguration. A digital image of dislocations is captured by a either a high resolution (5.4 μm pixels) or ultra-high resolution (2.4 μm pixels) CCD camera. Both cameras can be simultaneously mounted on the system and switched on-demand depending on the required resolution.

Fully automated X-ray topography

Engineered for usability, the entire data image collection process—including anode switch, detector switch, optics switch and alignment, sample alignment and image collection—is fully automated. Furthermore, the system can be combined with a wafer loader and image recognition based dislocation counting software. Customized recipes can be built to automate the entire process from loading a wafer to reporting dislocation densities.

XRTmicron Features

High-brilliance dual-wavelength X-ray source: MicroMax-007 DW
High-resolution CCD camera: XTOP (5.4 μm pixels)
Ultrahigh-resolution CCD camera: HR-XTOP (2.4 μm pixels)
Horizontal sample mount for minimum artificial strain to wafers
Automatic wafer curvature correction for best dislocation image quality
Automated system operation including X-ray anode switch, detector switch, optics switch and alignment, sample alignment, and image collection
Automated dislocation analysis
3, 4, 6, 8, 12 inch wafers supported
Wafer loader compatible

XRTmicron Specifications

Technique X-ray topography
Benefit Non-destructive evaluation of single-crystalline materials
Technology Imaging using X-rays
Attributes High-flux multi-target X-ray source, CCD imager
Options XTOP or HR-XTOP CCD
Computer External PC, MS Windows OS
Dimensions 1800 (W) x 1800 (H) x 1870 (D) (mm)
Mass 2200 kg (core unit)
Power requirements 3Ø, 200 V, 15 A

XRTmicron Resources

Webinars

Investigating Crystalline Defects of Semiconductors Using X-ray Topography Watch the Recording

Rigaku Journal articles

adobeCrystal defects in SiC wafers and a new X-ray topography system Read the Article
adobeHigh-throughput, high-resolution X-ray topography imaging system: XRTmicron Read the Article
adobeAutomated dislocation evaluation software for X-ray topography images: Topography Analysis Read the Article
adobeDefect structure analysis in single crystal substrates using XRTmicron Read the Article
adobeNon-destructive characterization of crystallographic defects of SiC substrates using X-ray topography for R&D and quality assurance in production Read the Article
adobeDramatic improvement in the throughput of X-ray topography Read the Article

Publications

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