Simultaneous WDXRF Spectrometer for ≤200 mm Wafers

Film thickness and composition measurements on wafers and media disks

The WDA-3650 X-ray fluorescence spectrometer for thin film evaluation continues Rigaku's 45-year history of XRF wafer analyzers that has mirrored the history of thin film device development. This latest XRF metrology tool contributes significantly to the process control of metal film thickness, film composition, and element concentration with new functions and a low-COO design.

WDA-3650 Overview

XRF tool for 200 mm wafers

A versatile and reliable tool for 200 mm and smaller wafers, the WDA-3650 incorporates our trademark X-Y-θ sample stage system for superior results on difficult measurements, such as ferrodielectric films. Multiple channels enable simultaneous measurement of multiple elements of interest for high throughput. The high energy resolution of this wavelength-dispersive XRF system, compared to energy-dispersive XRF systems, is especially useful to minimize peak overlap when element peaks are closely spaced.

Superior boron (B) measurement

For boron applications, the available AD-Boron channel provides 5-times greater sensitivity than previous models. The AutoCal function and built-in internal wafer stocker, previously only available on 300 mm tools, enable fully-automated daily tool qualification and intensity calibration.

Compact efficient design

The WDA-3650 is extremely compact with the basic unit requiring less than 1 m² of valuable cleanroom space, and there is no need for side maintenance service access. Power consumption has been reduced more than 20% compared to the previous model.

WDA-3650 application examples


WDA-3650 Features

Patented "diffraction avoidance" capability for accurate XRF results
High-sensitivity boron analysis (with AD-Boron channel)
Solid-state, oil-free X-ray generator
SMIF and through-the-wall configurations are available to meet the various needs of high-volume manufacturing wafer fabs
Compact design / small cleanroom footprint

WDA-3650 Specifications

Technique Simultaneous wavelength dispersive X-ray fluorescence
Benefit Thickness and composition of multi-layer stacks for ≤ 200 mm wafers
Technology 4 kW Rh-anode WDXRF
XYθ sample stage
Attributes Blanket wafer metrology
20 channels max., fixed type (₄Be ~₉₂U), scanning type (₂₂Ti ~₉₂U)
Features Designed for measurement throughput
Measurements under vacuum enable light-element sensitivity
Auto-calibration function (for use with auto wafer loader)
Options High-sensitivity boron detector (AD-Boron)
Auto wafer loader
SECS/GEM software
Dimensions 1120 (W) x 1450 (H) x 890 (D) mm
Measurement results Film thickness and composition

WDA-3650 Resources

Rigaku Journal articles

adobeEvaluation of MEMS device materials by X-ray fluorescence spectrometers for thin films Read the Article

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