XHEMIS TX-3000V
TXRF Spectrometer with Integrated VPD
Ultrahigh-speed metal contamination mapping
Highest sensitivity with VPD
For up to 300 mm wafers
XHEMIS TX-3000V Overview
Detection Limit of typical elements (LLD）
| Detection limit LLD (E10 atoms/cm²) | Al | Fe | Ni | Cu |
| TXRF | 14 | 0.06 | 0.06 | 0.09 |
| VPD-TXRF | 0.1 | 0.001 | 0.001 | 0.002 |
Measurement time: 1000 sec
XHEMIS TX-3000V Specifications
| Technique | Total reflection X-ray fluorescence (TXRF) with vapor phase decomposition (VPD) | |
|---|---|---|
| Benefit | Measurement of ultratrace elemental surface contamination 1E7 atoms/cm² detection limits ~ 3x improvement in mapping speed |
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| Technology | Integrated, automated VPD preparation, three-beam excitation, and automatic optics exchange | |
| Attributes | Three-detector configuration High-power W-anode X-ray source (9 kW rotating anode) Three excitation energies optimized for light, transition, and heavy elements XYθ sample stage Dual FOUP load ports |
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| Features | Full wafer mapping (SWEEPING-TXRF) Zero edge exclusion (ZEE-TXRF) Integrated, automated VPD pre-processing for Si wafers (VPD-TXRF) for highest sensitivity Dual FOUP load ports |
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| Options | Backside analysis (BAC-TXRF) GEM300 software, E84/OHT support Vapor Phase Treatment (VPT-TXRF) for enhanced sensitivity while retaining spatial info VPD for hydrophilic wafer surfaces (e.g., SiC) |
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| Dimensions | 1280 (W) x 3750 (D) x 2040 (H) (Excluding monitor and signal tower) |
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| Measurement results | Quantitative result, spectrum chart, color contour map, mapping table | |
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