XHEMIS TX-3000V

VPD-Integrated Total Reflection X-ray Fluorescence System

Ultrahigh-speed metal contamination mapping and ultrahigh sensitivity analysis

Next-generation TXRF system compatible with wafers up to 300 mm in diameter

Total Reflection X-ray fluorescence (TXRF) is widely utilized in semiconductor manufacturing processes—such as cleaning, lithography, etching, and thin film deposition—for the high-sensitivity detection of metallic contamination.

XHEMIS TX-3000

XHEMIS TX-3000V Overview

The XHEMIS TX-3000V is a state-of-the-art TXRF system equipped with a multi-element detector capable of simultaneously analyzing three locations, in addition to the conventional single-target, triple-beam configuration. This enables high-throughput analysis and allows for high-sensitivity detection of elements ranging from Na to U.

The system also features a fully integrated and automated Vapor Phase Decomposition (VPD) function, enabling ultra-high sensitivity analysis through sample concentration. Furthermore, its hydrophilic VPD capability allows for effective VPD-TXRF measurements on substrates such as silicon carbide (SiC), expanding its applicability to a wider range of advanced materials.

 


Detection Limit of typical elements (LLD)

Detection limit LLD (E10 atoms/cm²) Al Fe Ni Cu
TXRF 25 0.1 0.1 0.15
VPD-TXRF 0.1 0.001 0.001 0.002

Measurement time: 1000 sec  

XHEMIS TX-3000V Features

Parallel VPD processing and TXRF measurement maximize throughput
Enables ultra-high sensitivity analysis down to 1E7 atoms/cm²
High-throughput mapping measurement enabled by the multi-element detector during SWEEPING-TXRF analysis
Capable of analyzing a wide range of elements, from Na to U
Rigaku’s proprietary single-target, triple-beam configuration and XYθ stage enable high-precision trace analysis across the entire wafer surface
Comprehensive contamination analysis across all wafer regions is enabled by Zero Edge Exclusion (ZEE-TXRF), which allows measurement up to the wafer edge, and Backside Automatic Contamination TXRF (BAC-TXRF), which provides fully automated backside measurement.
Integration with machine learning-based spectral prediction software further doubles throughput
Designed to support FOUP, SMIF, and various system configurations to meet the diverse needs of high-volume production fabs
Enables elemental analysis of defects by importing measurement results from defect inspection tools

XHEMIS TX-3000V Specifications

Technique Total reflection X-ray fluorescence (TXRF) with vapor phase decomposition (VPD)
Benefit Measurement of ultratrace elemental surface contamination
1E7 atoms/cm² detection limits
~ 3x improvement in mapping speed 
Technology Integrated, automated VPD preparation, three-beam excitation, and automatic optics exchange
Attributes Three-detector configuration
High-power W-anode X-ray source (9 kW rotating anode) 
Three excitation energies optimized for light, transition, and heavy elements
XYθ sample stage
Dual FOUP load ports
Features Full wafer mapping (SWEEPING-TXRF)
Zero edge exclusion (ZEE-TXRF)
Integrated, automated VPD pre-processing for Si wafers (VPD-TXRF) for highest sensitivity
Dual FOUP load ports
Options Backside analysis (BAC-TXRF)
GEM300 software, E84/OHT support
Vapor Phase Treatment (VPT-TXRF) for enhanced sensitivity while retaining spatial info
VPD for hydrophilic wafer surfaces (e.g., SiC)
Dimensions 1280 (W) x 3750 (D) x 2040 (H)
(Excluding monitor and signal tower)
Measurement results Quantitative result, spectrum chart, color contour map, mapping table

XHEMIS TX-3000V Application Notes

The following application notes are relevant to this product

XHEMIS TX-3000V Resources

Webinars

Total Reflection X-ray Fluorescence (TXRF) for Semiconductor Manufacturing Watch the Recording

Rigaku Journal articles

Machine learning and application to spectral analysis on TXRF spectrometry Watch the Recording

XHEMIS TX-3000V Events

Learn more about our products at these events

  • JSAP Autumn EXPO
    September 6 2025 - September 9 2025
    Nagoya, Japan
  • The 86th JSAP Autumn Meeting 2025
    September 6 2025 - September 9 2025
    Tokyo, Japan
  • SEMICON Taiwan
    September 9 2025 - September 11 2025
    Taipei, Taiwan
  • EMRS Fall meeting 2025
    September 14 2025 - September 17 2025
    Warsaw, Poland
  • International Conference on Silicon Carbide and Related Materials (ICSCRM 2025) 
    September 15 2025 - September 18 2025
    Busan, Korea
  • SEMICON Japan
    December 1 2025 - December 2 2025
    Tokyo, Japan

Contact Us

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