XHEMIS TX-3000V

VPD-Integrated Total Reflection X-ray Fluorescence System

Ultrahigh-speed metal contamination mapping and ultrahigh sensitivity analysis

Next-generation TXRF system compatible with wafers up to 300 mm in diameter

Total Reflection X-ray fluorescence (TXRF) is widely utilized in semiconductor manufacturing processes—such as cleaning, lithography, etching, and thin film deposition—for the high-sensitivity detection of metallic contamination.

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XHEMIS TX-3000V Overview

The XHEMIS TX-3000V is a state-of-the-art TXRF system equipped with a multi-element detector capable of simultaneously analyzing three locations, in addition to the conventional single-target, triple-beam configuration. This enables high-throughput analysis and allows for high-sensitivity detection of elements ranging from Na to U.

The system also features a fully integrated and automated Vapor Phase Decomposition (VPD) function, enabling ultra-high sensitivity analysis through sample concentration. Furthermore, its hydrophilic VPD capability allows for effective VPD-TXRF measurements on substrates such as silicon carbide (SiC), expanding its applicability to a wider range of advanced materials.

Detection Limit of typical elements (LLD）

Detection limit LLD (E10 atoms/cm²)	Al	Fe	Ni	Cu
TXRF	25	0.1	0.1	0.15
VPD-TXRF	0.1	0.001	0.001	0.002

Measurement time: 1000 sec

XHEMIS TX-3000V Features

Parallel VPD processing and TXRF measurement maximize throughput

Enables ultra-high sensitivity analysis down to 1E7 atoms/cm²

High-throughput mapping measurement enabled by the multi-element detector during SWEEPING-TXRF analysis

Capable of analyzing a wide range of elements, from Na to U

Rigaku’s proprietary single-target, triple-beam configuration and XYθ stage enable high-precision trace analysis across the entire wafer surface

Comprehensive contamination analysis across all wafer regions is enabled by Zero Edge Exclusion (ZEE-TXRF), which allows measurement up to the wafer edge, and Backside Automatic Contamination TXRF (BAC-TXRF), which provides fully automated backside measurement.

Integration with machine learning-based spectral prediction software further doubles throughput

Designed to support FOUP, SMIF, and various system configurations to meet the diverse needs of high-volume production fabs

Enables elemental analysis of defects by importing measurement results from defect inspection tools

XHEMIS TX-3000V Specifications

Technique	Total reflection X-ray fluorescence (TXRF) with vapor phase decomposition (VPD)
Benefit	Measurement of ultratrace elemental surface contamination 1E7 atoms/cm² detection limits ~ 3x improvement in mapping speed
Technology	Integrated, automated VPD preparation, three-beam excitation, and automatic optics exchange
Attributes	Three-detector configuration High-power W-anode X-ray source (9 kW rotating anode) Three excitation energies optimized for light, transition, and heavy elements XYθ sample stage Dual FOUP load ports
Features	Full wafer mapping (SWEEPING-TXRF) Zero edge exclusion (ZEE-TXRF) Integrated, automated VPD pre-processing for Si wafers (VPD-TXRF) for highest sensitivity Dual FOUP load ports
Options	Backside analysis (BAC-TXRF) GEM300 software, E84/OHT support Vapor Phase Treatment (VPT-TXRF) for enhanced sensitivity while retaining spatial info VPD for hydrophilic wafer surfaces (e.g., SiC)
Dimensions	1280 (W) x 3750 (D) x 2040 (H) (Excluding monitor and signal tower)
Measurement results	Quantitative result, spectrum chart, color contour map, mapping table