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Semiconductor

TXRF 310Fab

High-speed metal contamination mapping for up to 300 mm wafers

Measurement of trace elemental surface contamination

Total reflection X-ray fluorescence (TXRF) analysis can gauge contamination in all fab processes, including cleaning, litho, etch, ashing, films, etc. The TXRF 310Fab can measure elements from Na through U with a single-target, 3-beam X-ray system and a liquid nitrogen-free detector system.

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TXRF 310Fab system for wafer surface contamination metrology by TXRF

TXRF 310Fab Overview

The TXRF 310Fab includes Rigaku's patented XYθ sample stage system, an in-vacuum wafer robotic transfer system, and new user-friendly windows software. These contribute to higher throughput, accuracy and precision, and easy routine operation.

Optional Sweeping TXRF software enables mapping of the contaminant distribution over the wafer surface to identify "hot spots" that can be automatically re-measured at higher precision.

Detection limit of typical elements (LLD)

Detection limit LLD (E10 atoms/cm²) Na Al Fe Ni Cu
25 25 0.1 0.1 0.15

Options

  • ZEE-TXRF capability overcomes the historical 15 mm edge exclusion of original TXRF designs, enabling measurements to be made with zero edge exclusion.
  • BAC-TXRF capability enables fully-automated front-side and back-side TXRF measurements of 300 mm wafers with non-contacting wafer flipping.

TXRF 310Fab Features

Quick contamination inspection for semiconductor processes
Accepts 300 mm, 200 mm, and 150 mm wafers
Wide range of analytical elements (Na~U)
Light-element sensitivity (for Na, Mg, and Al)
Single target 3-beam method and XYθ stage are unique to Rigaku, enabling highly accurate ultra trace analysis over the entire wafer surface
Import measurement coordinates from defect inspection tools for follow-up analysis
FOUP, SMIF, and through-the-wall configurations are available to meet the various needs of high-volume manufacturing wafer fabs

TXRF 310Fab Specifications

Technique Total reflection X-ray fluorescence (TXRF)
Benefit Rapid, non-destructive measurement of trace elemental surface contamination (Na – U)
Technology Three-beam TXRF system with electronically-cooled detector, and automatic optics exchange 
Attributes Three-detector configuration
High-power W-anode X-ray source (9 kW rotating anode)
Three excitation energies optimized for light, transition, and heavy elements
XYθ sample stage
Dual FOUP load ports
Features Full wafer mapping (SWEEPING-TXRF)
Zero edge exclusion (ZEE-TXRF)
Options FOUP, SMIF, and through-the-wall configurations
Backside analysis (BAC-TXRF)
GEM300 software, E84/OHT support
Dimensions 1200 (W) x 2050(H) x 2546 (D) mm
Measurement results Quantitative result, spectrum chart, color contour map, mapping table

TXRF 310Fab Application Notes

The following application notes are relevant to this product

TXRF 310Fab Resources

Webinars

Total Reflection X-ray Fluorescence (TXRF) for Semiconductor Manufacturing Watch the Recording

TXRF 310Fab Events

Learn more about our products at these events

  • Thermal Analysis Technology Seminar & Workshop
    October 15 2025 - October 15 2025
    Taipei, Taiwan
    Website
  • Thermal Analysis Technology Seminar & Workshop
    October 16 2025 - October 16 2025
    Taoyuan City, Taiwan
    Website
  • SEMICON Japan 2025
    December 16 2025 - December 18 2025
    Tokyo, Japan
    Website

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