TXRF-V310
TXRF Spectrometer with Integrated VPD
High-speed metal contamination mapping
Highest sensitivity with VPD
Total reflection X-ray fluorescence (TXRF) analysis can gauge contamination in all fab processes, including cleaning, litho, etch, ashing, films, etc. The TXRF-V310 can measure elements from Na through U with a single-target, 3-beam X-ray system and a liquid nitrogen-free detector system.
The TXRF-V310 includes Rigaku's patented XYθ sample stage system, an in-vacuum wafer robotic transfer system, and new user-friendly windows software. All of these contribute to higher throughput, higher accuracy and precision, and easy routine operation.

TXRF-V310 Overview
Integrated vapor phase decomposition (VPD) capability enables automatic VPD preparation of one wafer while a TXRF measurement is made on another wafer for the highest sensitivity and high throughput. VPD-TXRF eliminates the operator variability that may occur with ICP-MS, and VPD-TXRF can be completely controlled via factory automation. VPD recovery from selected areas, including the bevel area, is available.
Detection Limit of typical elements (LLD)
Detection limit LLD (E10 atoms/cm²) | Al | Fe | Ni | Cu |
TXRF | 25 | 0.10 | 0.10 | 0.15 |
VPD-TXRF | 0.1 | 0.001 | 0.001 | 0.002 |
Measurement time: 1000 sec
Options
- Sweeping TXRF software enables mapping of the contaminant distribution over the wafer surface to identify "hot spots" that can be automatically re-measured at higher precision.
- ZEE-TXRF capability overcomes the historical 15 mm edge exclusion of original TXRF designs, enabling measurements to be made with zero edge exclusion.
- BAC-TXRF capability enables fully-automated front-side and back-side TXRF measurements of 300 mm wafers with non-contacting wafer flipping.
TXRF-V310 Features
TXRF-V310 Specifications
Technique | Total reflection X-ray fluorescence (TXRF) with vapor phase decomposition (VPD) | |
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Benefit | Measurement of ultra-trace elemental surface contamination; 1E7 atoms/cm² detection limits | |
Technology | Automatic VPD preparation, three-beam excitation and automatic optics alignment | |
Attributes | High-power W-anode X-ray source (9 kW rotating anode) Three excitation energies optimized for light, transition, and heavy elements XYθ sample stage Dual FOUP load ports |
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Features | Full wafer mapping (SWEEPING-TXRF) Zero edge exclusion (ZEE-TXRF) Integrated, automated VPD pre-processing for Si wafers (VPD-TXRF) for highest sensitivity |
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Options | Backside analysis (BAC-TXRF) GEM300 software, E84/OHT support Vapor phase treatment (VPT-TXRF) for enhanced sensitivity while retaining spatial information VPD for hydrophilic wafer surfaces (e.g. SiC) 200 mm load ports |
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Dimensions | 1200 (W) x 2050(H) x 2990 (D) mm | |
Measurement results | Quantitative result, spectrum chart, color contour map, mapping table |
TXRF-V310 Application Notes
The following application notes are relevant to this product
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RSMD001 - Evaluation Of Wet Cleans In SiC Power MOSFET Fabrication By TXRF
TXRF-V310 Resources
Webinars
Total Reflection X-ray Fluorescence (TXRF) for Semiconductor Manufacturing | Watch the Recording |
Rigaku Journal articles
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Read the Article |
TXRF-V310 Events
Learn more about our products at these events
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EventDatesLocationEvent website
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CS International 2025April 6 2025 - April 8 2025Brussel, Belgium
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SEMICON SEAMay 19 2025 - May 21 2025Singapore
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EMRS Spring Meeting 2025May 25 2025 - May 29 2025Strasbourg, France
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Leti Innovation Days 2025June 24 2025 - June 26 2025Grenoble, France
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SOFC-XIXJuly 12 2025 - July 17 2025Stockholm, Sweden
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JSAP Autumn EXPOSeptember 6 2025 - September 9 2025Nagoya, Japan
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The 86th JSAP Autumn Meeting 2025September 6 2025 - September 9 2025Tokyo, Japan
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SEMICON TaiwanSeptember 9 2025 - September 11 2025Taipei, Taiwan
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EMRS Fall meeting 2025September 14 2025 - September 17 2025Warsaw, Poland
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International Conference on Silicon Carbide and Related Materials (ICSCRM 2025)September 15 2025 - September 18 2025Busan, Korea
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SEMICON JapanDecember 1 2025 - December 2 2025Tokyo, Japan

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