TXRF Spectrometer with Integrated VPD 

High-speed metal contamination mapping 

Highest sensitivity with VPD 

Total reflection X-ray fluorescence (TXRF) analysis can gauge contamination in all fab processes, including cleaning, litho, etch, ashing, films, etc. The TXRF-V310 can measure elements from Na through U with a single-target, 3-beam X-ray system and a liquid nitrogen-free detector system.

The TXRF-V310 includes Rigaku's patented XYθ sample stage system, an in-vacuum wafer robotic transfer system, and new user-friendly windows software. All of these contribute to higher throughput, higher accuracy and precision, and easy routine operation.

TXRF-V310 Overview

Integrated vapor phase decomposition (VPD) capability enables automatic VPD preparation of one wafer while a TXRF measurement is made on another wafer for the highest sensitivity and high throughput. VPD-TXRF eliminates the operator variability that may occur with ICP-MS, and VPD-TXRF can be completely controlled via factory automation. VPD recovery from selected areas, including the bevel area, is available.

Detection Limit of typical elements (LLD)

Detection limit LLD (E10 atoms/cm²) Al Fe Ni Cu
TXRF 25 0.10 0.10 0.15
VPD-TXRF 0.1 0.001 0.001 0.002

Measurement time: 1000 sec  


  • Sweeping TXRF software enables mapping of the contaminant distribution over the wafer surface to identify "hot spots" that can be automatically re-measured at higher precision.
  • ZEE-TXRF capability overcomes the historical 15 mm edge exclusion of original TXRF designs, enabling measurements to be made with zero edge exclusion.
  • BAC-TXRF capability enables fully-automated front-side and back-side TXRF measurements of 300 mm wafers with non-contacting wafer flipping.

TXRF-V310 Features

Accepts 300 mm, 200 mm, and 150 mm wafers
Wide range of analytical elements (Na~U)
Light-element sensitivity (for Na, Mg, and Al)
Single target 3-beam method and XYθ stage are unique to Rigaku, enabling highly accurate ultra trace analysis over the entire wafer surfaceIntegrated, fully-automated VPD preparation for highest sensitivity
1E7 atoms/cm² detection limits
Import measurement coordinates from defect inspection tools for follow-up analysis
Multitasking: simultaneous VPD and TXRF operation for highest throughput

TXRF-V310 Specifications

Technique Total reflection X-ray fluorescence (TXRF) with vapor phase decomposition (VPD)
Benefit Measurement of ultra-trace elemental surface contamination; 1E7 atoms/cm² detection limits
Technology Automatic VPD preparation, three-beam excitation and automatic optics alignment
Attributes High-power W-anode X-ray source (9 kW rotating anode)
Three excitation energies optimized for light, transition, and heavy elements
XYθ sample stage
Dual FOUP load ports
Features Full wafer mapping (SWEEPING-TXRF)
Zero edge exclusion (ZEE-TXRF)
Integrated, automated VPD pre-processing for Si wafers (VPD-TXRF) for highest sensitivity
Options Backside analysis (BAC-TXRF)
GEM300 software, E84/OHT support
Vapor phase treatment (VPT-TXRF) for enhanced sensitivity while retaining spatial information
VPD for hydrophilic wafer surfaces (e.g. SiC)
200 mm load ports
Dimensions 1200 (W) x 2050(H) x 2990 (D) mm
Measurement results Quantitative result, spectrum chart, color contour map, mapping table

TXRF-V310 Application Notes

The following application notes are relevant to this product

TXRF-V310 Resources


Total Reflection X-ray Fluorescence (TXRF) for Semiconductor Manufacturing Watch the Recording

Rigaku Journal articles

adobeMachine learning and application to spectral analysis on TXRF spectrometry Read the Article

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