FSAS III
Automated crystalline orientation measurement system
For SiC, graphite, GaN, Si, Ge, GaAs, LN, LT, sapphire, etc.
From production to quality control of single crystal materials, X-ray diffraction systems for single crystal orientation and quality assurance.
FSAS III Overview
After measuring the orientation of various single crystal materials such as Si, Ge, GaAs, SiC, quartz, LN, LT, sapphire, rutile and fluorite accurately, the FSAS III transmits the angle cutting information to the cutter (for instance, to a wire saw). The orientation verification measurement of single crystals after cutting can also be carried out automatically. No special skills are required by the operator.
FSAS III Features
FSAS III Specifications
| Technique | X-ray diffraction (XRD) | |
|---|---|---|
| Technology | X-ray diffraction system for single-crystal orientation measurement of ingot and wafer | |
| Benefit | Automatic determination of the cutting orientation of various single crystal materials. | |
| Attributes | Automated X-ray and optical measurement system Safety-centered design Measuring conditions library |
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| Features | Custom sample holders optional to fit sample shape, cutting method and cutter type Verification of cut angle of a block or wafer sample after cutting Touch panel interface, one- click to conduct the automatic measurement Auto-lock function to protect the sample integrity and the measurement accurate results |
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| Dimensions | 1300 (W) x 845 (D) x 1600 (H) mm (Excluding the status lamp and X-ray warning lamp) |
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| Measurement results | Get the angular deviation on a lattice plane relative to a wafer. Angular deviation of a lattice plane relative to an orientation flat (OF) of a wafer |
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FSAS III Events
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