Transistors using silicon germanium (SiGe) have low power consumption and operate at high speed. The device performance is affected by the Ge concentration, lattice strain (relaxation), and crystal quality of the SiGe layer. The reciprocal space mapping using a one-dimensional detector efficiently revealed these characteristics in a short time.
XRD products from Rigaku
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Laboratory micro-spot XRD residual stress analysis with both iso- and side-inclination methods
2D X-ray detector with latest semiconductor technology designed for home lab diffractometers