EUV Optics
Multilayer Optics for Extreme Ultraviolet Lithography and EUV Metrology
High efficiency multilayer optics for 13.5 nm, 6.x nm wavelengths
Rigaku is the exclusive supplier of Osmic multilayer coatings and optics for EUV. Based on over 40 years of experience developing and supplying X-ray multilayers and optics for high-volume industrial and scientific use, our products enable the highest system performance by optimizing the multilayer optical design to the application and source/tool characteristics.
EUV Optics Overview
Glancing to normal incidence optics for 13.5 nm (EUV)
EUVL is used extensively in high-volume manufacturing of memory and logic integrated circuits. Mo/Si multilayers, optimized for EUV, with protective cap layers of various designs are available from Rigaku for use in collection, beam conditioning pre-reticle for scanners and beam conditioning pre-sample and imaging post-sample for metrology.
Grazing to normal incidence optics for 6.x nm (BEUV)
Beyond EUV (BEUV) is based on current development of new X-ray sources and associated multilayer optics. Today, we offer the highest-performance optics available for BEUV.
EUV Optics Features
EUV Optics Specifications
| Technique | Extreme ultraviolet lithography and metrology | |
|---|---|---|
| Benefit | High efficiency multilayer optics | |
| Technology | Multilayer optics | |
| Core attributes | High reflectivity ≥ 65% at 13.5 nm typical, wavelength precision down to 5-10 picometers | |
| Options | Standard production materials: Mo/Si, La/B, La/B₄C, Ru/B₄C, Mo/B₄C, W/C, Cr/C, Cr/Sc, Al₂O₃/B₄C, SiC/Si, Si/C, SiC/C... | |
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