- Benchtop TXRF for ultra-trace analysis
- GI-XRF capability for thin film characterization
- Quantify to parts-per-billion (ppb) levels
- 600 W X-ray tube for fast measurements
- Silicon drift detector (SDD)
- 16 position autosampler
- High sensitivity for As, Se and Cd
- Perfect for nano-particle analysis
- Analysis environment: Air, N₂*, or He*
Benchtop total reflection X-ray Fluorescence (TXRF) spectrometer
Rapid trace elemental analysis and thin film characterization
The new, next generation Rigaku NANOHUNTER II benchtop total reflection X-ray fluorescence (TXRF) spectrometer enables high-sensitivity ultra-trace elemental analysis of liquids down to parts-per-billion (ppb) concentrations. Total reflection X-ray fluorescence spectroscopy is a method by which an incident beam of X-rays just grazes the sample, delivering low-background noise, high-sensitivity measurement of ultra-trace elements.
TXRF for trace element environmental applications
Due to increasingly stringent environmental regulations, there is now demand for a simpler method of conducting elemental analyses down to ppb levels for factory waste liquids and effluent streams. Using the NANOHUNTER™ II spectrometer, analysis down to the ppb level becomes possible, even with a very small sample size, merely by adding a drop of liquid to the sample carrier, drying it, and then performing the measurement. Quantitative analyses using internal standard substances can also be easily performed.
Benchtop TXRF with 600 W X-ray tube power
Rigaku NANOHUNTER II TXRF analyzer combines a fully automatic optical axis adjustment system that provides stable high-sensitivity analysis in an easily handled benchtop form factor that allows quick and trouble-free operation. With a high-power 600 W X-ray source, a newly developed mirror (optic) and a large-area silicon drift detector (SDD), the NANOHUNTER II TXRF spectrometer features a 16 position autosampler to take advantage of fast measurement times for high throughput.
TXRF principle of operation
An incident X-ray beam impinges upon the sample at a shallow angle (below the critical angle for total reflection of X-rays for the substrate) resulting in virtually complete reflection of the excitation beam away from the silicon drift detector (SDD). This affords dramatically reduced background contributions in the measured energy dispersive X-ray fluorescence (EDXRF) spectra. By efficiently exciting the surface elements, while virtually eliminating the background noise, the TXRF technique affords extremely high signal-to-noise performance resulting in ultra-trace elemental measurement sensitivity.
GI-XRF for depth profiling of thin films
In the area of analysis of solid surfaces, there is demand (primarily in the fields of thin films and thick films) for analyses that penetrate slightly deeper than the surface. For this kinds of analyses, a methodology called grazing incidence X-ray fluorescence (GI-XRF) is employed whereby the elements beneath the surface are excited by varying the incident angle of the X-ray source. Because the NANOHUNTER II TXRF spectrometer has variable angle of incidence, it is possible to perform depth profile surface analyses. The GI-XRF technique is applicable to nanoscale research.
|Total reflection X-ray fluorescence (TXRF)
|High-sensitivity ultra-trace elemental analysis of liquids
|TXRF and GI-XRF
|600 W X-ray source, large-area silicon drift detector (SDD)
|N₂ or He environment
|697 (W) x 691 (H) x 597 (D) (mm)
|Mass (core unit)
|1Ø, 100-240 V, 15 A