TXRF 3760
Features
- Ease of operation and rapid analysis results
- Accepts 200 mm and smaller wafers
- Compact design, footprint
- High-power rotating-anode source
- Wide range of analytical elements (Na~U)
- Light-element sensitivity (for Na, Mg, and Al)
- Application to bare Si and to non-Si substrates
- Import measurement coordinates from defect inspection tools for follow-up analysis
Surface contamination metrology
Measure elemental contamination at discrete points or with full wafer maps
Specifications
Product name | TXRF 3760 |
Technique | Total reflection X-ray fluorescence (TXRF) |
Benefit | Rapid elemental analysis, of Na to U, to gauge wafer contamination in all fab processes |
Technology | 3-beam TXRF system with liquid nitrogen-free detector |
Core attributes | Up to 200 mm wafers, XYθ sample stage system, in-vacuum wafer robotic transfer system, ECS/GEM communication software |
Core options | Sweeping TXRF software enables mapping of the contaminant distribution over the wafer surface to identify "hot spots." ZEE-TXRF capability enabling measurements to be made with zero edge exclusion |
Computer | Internal PC, MS Windows® OS |
Core dimensions | 1000 (W) x 1760 (H) x 948 (D) mm |
Mass | 100 kg (core unit) |
Power requirements | 3Ø, 200 VAC 50/60 Hz, 100 A |