TXRF 3760
Wafer Surface Contamination for up to 200 mm Wafers
Measure elemental contamination at discrete points or with full wafer maps
Total reflection X-ray fluorescence (TXRF) analysis can gauge contamination in all fab processes, including cleaning, litho, etch, ashing, films, etc. The TXRF 3760 can measure elements from Na through U with a single-target, 3-beam X-ray system, and a liquid nitrogen-free detector system.
TXRF 3760 Overview
The TXRF 3760 includes Rigaku's patented XYθ sample stage system, an in-vacuum wafer robotic transfer system, and new user-friendly Windows software. These contribute to higher throughput, accuracy and precision, and easy routine operation.
Optional Sweeping TXRF software enables mapping the contaminant distribution over the wafer surface to identify "hot spots" that can be automatically re-measured at higher precision.
Optional ZEE-TXRF capability overcomes the historical 15 mm edge exclusion of original TXRF designs, enabling measurements to be made with zero edge exclusion.
High-reliability wafer surface contamination analysis
TXRF is an indispensable tool for materials and device development for semiconductor manufacturing. Remarkable reliability is achieved thanks to newly developed X-ray optics, a new stage mechanism, and a new concept in compact rotating-anode X-ray sources. Also, a new, low-COO TXRF model offers reduced initial and operating costs.
Detection limit of typical elements (LLD)
| Detection limit LLD (E10 atoms/cm²) | Na | Al | Fe | Ni | Cu |
| 25 | 25 | 0.1 | 0.1 | 0.15 |
TXRF 3760 Features
TXRF 3760 Specifications
| System parameters | Specifications | |
|---|---|---|
| Technique | Total reflection X-ray fluorescence (TXRF) | |
| Benefit | Rapid, non-destructive measurement of trace elemental surface contamination (Na – U) | |
| Technology | Three-beam TXRF system with electronically-cooled detector, and automatic optics exchange | |
| Attributes | High-power W-anode X-ray source (9 kW rotating anode) Three excitation energies optimized for light, transition, and heavy elements XYθ sample stage for diffraction avoidance In-vacuum wafer robotic transfer system Accepts up to 200 mm wafers |
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| Features | Full wafer mapping (SWEEPING-TXRF) Zero edge exclusion (ZEE-TXRF) |
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| Options | SECS/GEM software SMIF handling |
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| Dimensions | 1000 (W) x 1760 (H) x 948 (D) mm | |
| Measurement results | Quantitative result, spectrum chart, color contour map, mapping table | |
TXRF 3760 Application Notes
The following application notes are relevant to this product
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RSMD005 - Surface Contamination of SiC, GaN Power Device Wafers
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RSMD001 - Evaluation Of Wet Cleans In SiC Power MOSFET Fabrication By TXRF
TXRF 3760 Resources
Webinars
| Total Reflection X-ray Fluorescence (TXRF) for Semiconductor Manufacturing | Watch the Recording |
Rigaku Journal articles
 Machine learning and application to spectral analysis on TXRF spectrometry |
Read the Article |
| Evaluation of contamination of power semiconductor device wafers by total reflection X-ray fluorescence spectrometer |
Read the Article |
TXRF 3760 Events
Learn more about our products at these events
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EventDatesLocationEvent website
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SEMICON SEAMay 19 2025 - May 21 2025Singapore
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EMRS Spring Meeting 2025May 25 2025 - May 29 2025Strasbourg, France
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Leti Innovation Days 2025June 24 2025 - June 26 2025Grenoble, France
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SOFC-XIXJuly 12 2025 - July 17 2025Stockholm, Sweden
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JSAP Autumn EXPOSeptember 6 2025 - September 9 2025Nagoya, Japan
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The 86th JSAP Autumn Meeting 2025September 6 2025 - September 9 2025Tokyo, Japan
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SEMICON TaiwanSeptember 9 2025 - September 11 2025Taipei, Taiwan
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EMRS Fall meeting 2025September 14 2025 - September 17 2025Warsaw, Poland
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International Conference on Silicon Carbide and Related Materials (ICSCRM 2025)September 15 2025 - September 18 2025Busan, Korea
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SEMICON JapanDecember 1 2025 - December 2 2025Tokyo, Japan
Contact Us
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